CC Lin, Y Kuo – ECS Journal of Solid State Science and Technology, 2016
The enhancement of white light emission from the amorphous Zr-doped HfO2film on the p-type silicon wafer with the embedding of a nanocrystalline cadmium selenide layer has been studied through understanding characteristics of the emitted light, leakage current, surface topography, driving methods and time. All changes of the emission characteristics can be explained with the formation and thermal excitation of the conductive paths. The deterioration of the light emission process over a long period of 5,664 hours has also been investigated and discussed. There are many potential applications of this kind of light emitting device.
… film. The emission spectrum was measured with an optical emission spectrometer
(StellarNet BLK-C-SR-TEC). The color coordinates of the emitted light on the 1931
CIE chart was calculated using the color matching functions. …
